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Datasheet File OCR Text: |
Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ : 150 Tstg: -55 to +150 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE Test conditions MIN -20 -10 -6 MAX UNIT V V V Ic=-1mA , IE=0 IC=-10mA , IB=0 IE=-1mA, IC=0 VCB=-20 V , IE=0 VEB=-6 V , IC=0 -0.1 -0.1 140 600 -0.5 -1.5 A A VCE=-1V, IC=-0.5A IC=-2A, IB= -100mA IC= -2A, VCE=-1V VCE=-1V, IC= -0.5A V V Transition frequency fT f = 30MHz 100 MHz CLASSIFICATION OF hFE Rank Range Y 140-280 GR 200-400 BL 300-600 |
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